AlSb-InAs-AlSb p-n-p transistors with low turn-on voltage, narrow bases, and low base resistance
- 1 January 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 39 (11) , 2659-2660
- https://doi.org/10.1109/16.163523
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Electrical properties and band offsets of InAs/AlSb n-N isotype heterojunctions grown on GaAsApplied Physics Letters, 1989