Novel AlInAs/InP HEMT

1 May 1990

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 26 (10) , 651-652
https://doi.org/10.1049/el:19900426

Abstract

The fabrication of the first AlInAs/InP HEMT is reported. This device has extrinsic transconductance of 40mS/mm, gate-drain and drain-source breakdown voltages of 20 V and saturation drain current densities of 0.1 A/mm of gate width. These preliminary results show the potential of the AIInAs/InP heterojunctions for a wide variety of application including microwave power HEMTs.

Keywords

MICROWAVE POWER TRANSISTOR APPLICATION
40 MS
ALINAS-INP
SATURATION DRAIN CURRENT DENSITIES
HEMT
DRAIN-SOURCE BREAKDOWN VOLTAGES
HETEROJUNCTIONS
GATE-DRAIN BREAKDOWN VOLTAGE
EXTRINSIC TRANSCONDUCTANCE
20 V
FABRICATION
III-V SEMICONDUCTORS

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