PROCESS CHARACTERISATION FOR LPCVD DEPOSITION OF SiO2 FILMS FROM TEOS LIQUID SOURCE

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Abstract
Process characterisation of SiO2 films deposition from tetraethylorthosilicate (TEOS) liquid source has been performed by using a LPCVD industrial system, handling 4 wafers. The influence of the most significant manipulated variables (such as the process temperature and pressure and the TEOS and O2 flow rate) on the deposition rate and the film uniformity was investigated. Results were analyzed on the basis of the conclusions drawn from preliminary modelling considerations. Optimal sets of parameters were then identified and used to develop industrial processes at low and high deposition rate

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