CMOS operation below freezeout
- 13 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 32, 43-47
- https://doi.org/10.1109/ltse.1989.50179
Abstract
A description is given of a cryogenic CMOS process, Rockwell Cryogenic CMOS (RC/sup 2/), for use in readout circuits for impurity band conduction detectors that must operate at a temperature of 12 K or less. The RC/sup 2/ process has been successfully used to implement both analog and digital circuits that operate very well at 10 K. The behavior of RC/sup 2/ FETs in the weak inversion region is discussed. To minimize the power consumption of the large arrays of analog detector readout circuits, the subthreshold region of FET operation is utilized. MOSFETs at these temperatures exhibit the kink effect and have long time constants to reach equilibrium after a large bias change, which must be considered in circuit design. It is concluded that the RC/sup 2/ approach has overcome some of the major obstacles to basic functionality of circuits at temperatures below freezeout and in weak as well as strong inversion.Keywords
This publication has 2 references indexed in Scilit:
- Detection of individual 0.4–28 μm wavelength photons via impurity-impact ionization in a solid-state photomultiplierApplied Physics Letters, 1987
- Analysis of kink characteristics in Silicon-on-insulator MOSFET's using two-carrier modelingIEEE Transactions on Electron Devices, 1985