Far-Infrared Photoconductivity and Photo-Hall Effects in Antimony Doped Germanium
- 1 September 1973
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 35 (3) , 788-796
- https://doi.org/10.1143/jpsj.35.788
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Absorption and Photoconductivity Spectra of In-Doped Ge in the Far-Infrared RegionJapanese Journal of Applied Physics, 1971
- Higher Donor Excited States for Prolate-Spheroid Conduction Bands: A Reevaluation of Silicon and GermaniumPhysical Review B, 1969
- Far-Infrared Absorption Spectra of Sb-Doped Ge at Low TemperatureJournal of the Physics Society Japan, 1969
- Low Temperature Properties of the Reststrahlen Powder Filters in the Far-Infared RegionJapanese Journal of Applied Physics, 1968
- Compensation Dependence of Impurity Conduction in Antimony-Doped GermaniumPhysical Review B, 1965
- Resistivity and hall coefficient of antimony-doped germanium at low temperaturesJournal of Physics and Chemistry of Solids, 1958
- Interaction of Impurities and Mobile Carriers in SemiconductorsPhysical Review B, 1955