Formation of buried epitaxial Co silicides by ion implantation
- 1 March 1989
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 39 (1-4) , 276-279
- https://doi.org/10.1016/0168-583x(89)90786-6
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Transistor effect in monolithic Si/CoSi 2 /Si epitaxial structuresElectronics Letters, 1984
- Kinetics of CoSi2 from evaporated siliconApplied Physics A, 1984
- Electrical Resistivity Study of Lattice Defects Introduced in Copper by 1.25-Mev Electron Irradiation at 80°KPhysical Review B, 1956