SELECTIVE EPITAXY BASE FOR BIPOLAR TRANSISTORS

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Abstract
A Selective Epitaxy Base Transistor (SEBT) is presented with a basewidth of 1100Å and an intrinsic base sheet resistance of 2800Ω/[MATH]. It is demonstrated that a sub-1000Å basewidth is possible if the temperature-time cycles after base deposition are minimal. Using thin epitaxial layers to form the intrinsic base avoids difficulties in sidewall formation caused by nucleations on the extrinsic base polysilicon at the emitter window perimeter. The poly/epi interface was found to be on a (111) plane. This leads to a degradation of the device characteristics due to extrinsic base encroachment underneath the sidewall

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