A GaAs MCM power amplifier of 3.6 V operation with high efficiency of 49% for 0.9 GHz digital cellular phone systems
- 17 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 569-572 vol.2
- https://doi.org/10.1109/mwsym.1994.335485
Abstract
Extremely small GaAs PA has been implemented using the AlN multilayer MCM for 0.9 GHz digital cellular phones. The present PA exhibited the efficiency of 49% with drain supply voltage as low as 3.6 V. The PA was designed to provide the matching circuits with the maximum gain at the input and the minimum intermodulation distortion at the output.Keywords
This publication has 3 references indexed in Scilit:
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- High performance integrated PA, T/R switch for 1.9 GHz personal communications handsetsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Backoff improvement of an 800-MHz GaAs FET amplifier for a QPSK transmitter using an adaptive nonlinear distortion cancellerPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002