Abstract
A method for the generation of random network models for the structure of amorphous semiconductors is critically re-examined in terms of the structure factor of the models in reciprocal space. It is found that, while the authors' previous models show a feature that is retained from the original diamond cubic structure (as pointed out by Guttman, Thorpe and de Leeuw), this may be suppressed simply by taking the randomisation process further.

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