Transient device modeling using the Lei-Ting hydrodynamic balance equations

1 August 1996

journal article
research article
Published by AIP Publishing in Journal of Applied Physics

Vol. 80 (3) , 1891-1900
https://doi.org/10.1063/1.363003

Abstract

A transient semiconductor device simulation model based on the recently developed Lei‐Ting hydrodynamic balance equations is presented. Unlike other hydrodynamic models, where the various relaxation rates are imported from Monte Carlo calculations or simply assumed to be constant, our model calculates these relaxation rates within the simulation process, as functions of the electron drift velocity, electron temperature, as well as the electron density. Without any complicated mathematics, a decoupled method with a relatively large time step has been applied to the transient simulation on a one‐dimensional ballistic diode.

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