Preparation and properties of rapidly quenched films in the PbONb2O5 system
- 31 January 1989
- journal article
- Published by Elsevier in Materials Research Bulletin
- Vol. 24 (1) , 63-69
- https://doi.org/10.1016/0025-5408(89)90009-3
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Preparation and photoconduction of rapidly quenched films in the Bi2O3-TiO2 systemJournal of Materials Science, 1988
- Preparation and semiconductive properties of glassy films in the V2O5|MoO3 systemMaterials Research Bulletin, 1988
- Photoconduction of rapidly quenched films in the PbOTiO2 systemMaterials Research Bulletin, 1987
- Preparation and properties of glassy films in the V2O5ZnO systemMaterials Research Bulletin, 1987
- Elaboration et photoconduction des films de Bi2O3-MO3 (M = Mo OU W) obtenus par hypertrempeMaterials Research Bulletin, 1986
- Preparation and photoconduction of rapidly quenched films in the Bi2O31bM2O5 system (M=V, Nb and Ta)Materials Research Bulletin, 1985
- Crystallization in rapid quenching of La0.33NbO3 meltMaterials Research Bulletin, 1982
- Rapid Quenching Technique Using Thermal‐Image Furnace for Glass PreparationJournal of the American Ceramic Society, 1981
- Sur de nouvelles phases oxyfluorees derivees du niobate de plomb: Etudes cristallographique et dielectriqueMaterials Research Bulletin, 1974
- Electrical Properties of Lead‐Barium Niobates and Associated MaterialsJournal of the American Ceramic Society, 1960