Recovery stages inUO2at low temperatures

Abstract
Formation of radiation damage and its recovery in UO2 single crystals were investigated in the temperature range from 5 to 293 K. The samples were implanted with Xe ions at 5 K and subsequently in situ analyzed using the ion-channeling technique. Successive measurements were performed during the warming-up of the sample to 293 K. Two recovery stages in the U sublattice were revealed: the first one in the vicinity of 77 K and the second one at 110±5 K.

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