Band parameters of semiconductors with zincblende, wurtzite, and germanium structure
- 1 December 1963
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 24 (12) , 1543-1555
- https://doi.org/10.1016/0022-3697(63)90097-0
Abstract
No abstract availableKeywords
This publication has 29 references indexed in Scilit:
- Electronic Band Structure of Group IV Elements and of III-V CompoundsPhysical Review B, 1963
- Reflectivity of Semiconductors with Wurtzite StructurePhysical Review B, 1963
- Critical Points and Ultraviolet Reflectivity of SemiconductorsPhysical Review Letters, 1962
- Fundamental Reflectivity of GaAs at Low TemperaturePhysical Review Letters, 1962
- Interband Transitions in Groups 4, 3-5, and 2-6 SemiconductorsPhysical Review Letters, 1962
- Band Structure of the Intermetallic Semiconductors from Pressure ExperimentsJournal of Applied Physics, 1961
- Piezoelectric Scattering and Phonon Drag in ZnO and CdSJournal of Applied Physics, 1961
- Band Structure and Transport Properties of Some 3–5 CompoundsJournal of Applied Physics, 1961
- Cyclotron and Paramagnetic Resonance in Strained CrystalsPhysical Review Letters, 1961
- Simplified LCAO Method for Zincblende, Wurtzite, and Mixed Crystal StructuresPhysical Review B, 1959