Picosecond measurement of Auger recombination rates in InGaAs
- 15 September 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (6) , 652-654
- https://doi.org/10.1063/1.95344
Abstract
The picosecond decay of carriers in InGaAs, following photo excitation at photon energies just above the band edge, has been measured. A mode-locked neodymium:yttrium aluminum garnet pumped optical parametric amplifier provided the tunable, 35-ps pulses for excite-probe measurements. At carrier densities in excess of 1018 cm−3 Auger processes are found to dominate the carrier recombination. We determine an Auger rate of 2.5±0.5×10−28 cm6 s−1.Keywords
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