Phonon-assisted intervalence band absorption in semiconductor lasers
- 1 June 1990
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 5 (6) , 557-560
- https://doi.org/10.1088/0268-1242/5/6/016
Abstract
Intervalence band absorption is discussed as a phenomenon that affects the threshold current of a semiconductor laser. However, calculated values of the absorption coefficient are too small to yield a remarkable effect. The situation is changed if phonon-assisted intervalence band absorption is taken into account. Then the absorption coefficient is considerably enlarged, for instance by more than an order of magnitude in In0.72Ga0.28As0.6P0.4 with a laser wavelength of 1.3 mu m.Keywords
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