Compensation and ionized defect scattering in PbTe
- 1 December 1970
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 8 (23) , 1937-1940
- https://doi.org/10.1016/0038-1098(70)90663-0
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Some electrical properties of lead selenide at low temperatures (0.3°K–300°K)Solid State Communications, 1970
- New Model for Vacancy States in PbTePhysical Review Letters, 1969
- Étude de la réaction à trois corps 11B(p, αα)α de 150 keV à 2 MeVJournal de Physique et le Radium, 1968
- P-T-x Phase Diagram of the Lead Telluride SystemJapanese Journal of Applied Physics, 1966
- Mobility of Electrons and Holes in PbS, PbSe, and PbTe between Room Temperature and 4.2°KPhysical Review B, 1958
- Transport and Deformation-Potential Theory for Many-Valley Semiconductors with Anisotropic ScatteringPhysical Review B, 1956