Investigations of growth of self-assembled GaInN–GaN islands on SiC substrate by metalorganic vapor phase epitaxy
- 31 August 2002
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 243 (1) , 103-107
- https://doi.org/10.1016/s0022-0248(02)01485-9
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Wide-bandgap group-III nitride lasersPublished by SPIE-Intl Soc Optical Eng ,2002
- Growth of self-assembled GaxIn1−xP quantum islands on GaPJournal of Crystal Growth, 2000
- Violet InGaN/GaN/AlGaN-Based Laser Diodes Operable at 50°C with a Fundamental Transverse ModeJapanese Journal of Applied Physics, 1999
- Nanometer-scale InGaN self-assembled quantum dots grown by metalorganic chemical vapor depositionApplied Physics Letters, 1999
- MOVPE of GaInN heterostructures and quantum wellsJournal of Crystal Growth, 1998
- Intense photoluminescence from self-assembling InGaN quantum dots artificially fabricated on AlGaN surfacesApplied Physics Letters, 1998
- Real time control of InxGa1−xN molecular beam epitaxy growthApplied Physics Letters, 1998
- Mechanism for Coherent Island Formation during HeteroepitaxyJournal de Physique I, 1996
- Critical layer thickness for self-assembled InAs islands on GaAsPhysical Review B, 1994
- Effect of strain on surface morphology in highly strained InGaAs filmsPhysical Review Letters, 1991