2 to 30 GHz Monolithic Distributed Amplifier

1 October 1984

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 077-079
https://doi.org/10.1109/gaas.1984.10401285

Abstract

A low noise distributed amplifier is demonstrated over the 2 to 26.5 GHz band. The device exhibits a gain of 6 ± 0.3 dB over this band with a maximum noise figure of 5A dB and a maximum input/output VSWR of 1.7. The output power at the 1 dB gain compression point is typically 13 dBm. The 7-section distributed amplifier is fabricated on a chip with dimensions of 1.1×3.2 mm using optical lithography.

Keywords

LOGIC GATES
GAIN
POWER TRANSMISSION LINES
NOISE FIGURE
GALLIUM ARSENIDE
DISTRIBUTED AMPLIFIERS
FIELD EFFECT TRANSISTORS

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