An analytical solution to a double-gate MOSFET with undoped body
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- 1 May 2000
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 21 (5) , 245-247
- https://doi.org/10.1109/55.841310
Abstract
A one-dimensional (1-D) analytical solution is derived for an undoped (or lightly-doped) double-gate MOSFET by incorporating only the mobile charge term in Poisson's equation. The solution gives closed forms of band bending and volume inversion as a function of silicon thickness and gate voltage. A threshold criterion is derived which serves to quantify the gate work function requirements for a double-gate CMOS.Keywords
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