Studies on Adsorption and Nucleation of Ge on Tungsten Surface by FEM

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Abstract
The formation of Ge nucleus on the tungsten surface kept at 77∼730°K has been investigated by Field Emission Microscope. Ge atoms deposited at low temperature are stacked on the impacted places. At above 400°K, deposited Ge atoms spread out over the surface to form a uniform thin layer on which small nuclei are formed. At 580°K the nucleus prefers to form on the close packed {110} planes at the impinging rate of 4×1013 atom/cm2-sec. At 730°K the bridge types are formed between {111} and regions around {100} at the same rate. Even at 730°K, the nuclei are formed on the {110} planes at the rate 1×1014 atom/cm2-sec, finally these nuclei coalesce to large crystallites on the loosely packed {111} and around {100} planes. The estimated sizes of a nucleus and a crystallite are 8 Å in diameter and 520×180 Å, respectively.

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