Ohmic contacts for GaAs devices

1 January 1966

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/iedm.1966.187659

Abstract

Ohmic contacts were developed for GaAs devices, such as transistors and Gunn oscillators. Contacts had to meet the following requirements: 1) they must be ohmic to both low and high resistivity n-and p-type GaAs, 2) they must contact both

Keywords

OHMIC CONTACTS
GALLIUM ARSENIDE
SILICON
DIODES
GUNN DEVICES
OSCILLATORS
CONDUCTIVITY
FABRICATION
IMPURITIES
SEALS

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