Anodic oxide film as gate insulator for InP MOSFETs

21 January 1982

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 18 (2) , 63-64
https://doi.org/10.1049/el:19820044

Abstract

An anodic oxide film of InP, which had an interface state density of ≲ 10¹¹ cm⁻² eV⁻¹ near midgap and worked well as the gate insulator for InP MOSFETs, was obtained by optimising its preparation conditions. The excellence of the anodic oxide as a gate insulator was confirmed by a high electron effective mobility (1500 cm²/Vs) in the accumulation-mode InP MOSFETs.

Keywords

ACCUMULATION-MODE
FIELD EFFECT DEVICES
GATE INSULATOR
INP MOSFET
ANODIC OXIDE FILM
III-V SEMICONDUCTORS
HIGH ELECTRON EFFECTIVE MOBILITY

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