MBE grown Npn AlGaAs/GaAs bipolar transistors with C p doping by electron cyclotron resonance source activated methane

28 February 1991

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 27 (5) , 465-467
https://doi.org/10.1049/el:19910293

Abstract

Using an electron cyclotron resonance source in a UHV system, vacuum connected to an adjacent molecular beam epitaxy, carbon doping in GaAs was obtained and applied to the base of a heterojunction Npn bipolar transistor. The devices fabricated on the heterostructures grown as described exhibited current gains of about 50. After subjecting the layers to a 700°C/20 minutes anneal cycle, the newly fabricated devices yielded current gains of about 50 demonstrating their stability.

Keywords

ALGAAS-GAAS:C
700 DEGC
ELECTRON CYCLOTRON RESONANCE SOURCE
STABILITY
MOLECULAR BEAM EPITAXY
HETEROJUNCTION NPN BIPOLAR TRANSISTOR
UHV SYSTEM
CURRENT GAINS
ANNEAL CYCLE
20 MIN
III-V SEMICONDUCTORS

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