Frenkel pairs in silicon and germanium
- 1 December 1989
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects and Defects in Solids
- Vol. 111-112 (1-2) , 99-118
- https://doi.org/10.1080/10420158908212986
Abstract
Consideration has been given to elastic and Coulomb interactions between the vacancy and self-interstitial associated in the Frenkel pair. A contribution to the interaction energy due to strain-induced polarization is also discussed. The model considered makes it possible to interpret experimental data on the rate of defect production.This publication has 9 references indexed in Scilit:
- The Effect of the Vacancy Charge State on the Radiation Defect Formation in SiliconPhysica Status Solidi (a), 1984
- Silicon self-interstitial migration: Multiple paths and charge statesPhysical Review B, 1984
- Microscopic Theory of Atomic Diffusion Mechanisms in SiliconPhysical Review Letters, 1984
- Theory of the silicon vacancy: An Anderson negative-systemPhysical Review B, 1980
- Low-temperature recovery of irradiation defects in-type germaniumPhysical Review B, 1974
- A new mechanism for interstistitial migrationPhysics Letters A, 1972
- Behaviour of Primary Defects in Electron‐Irradiated GermaniumPhysica Status Solidi (b), 1971
- Stored-Energy Released in Electron-Irradiated GermaniumPhysical Review B, 1968
- Irradiation Damage in-Type Germanium at 4.2°KPhysical Review B, 1967