Electrical and photovoltaic properties of PbS-CdSe heterojunctions†
- 1 May 1974
- journal article
- research article
- Published by Taylor & Francis in International Journal of Electronics
- Vol. 36 (5) , 623-628
- https://doi.org/10.1080/00207217408900455
Abstract
Heterojunctions between n-typo CdSe and p-type PbS wero prepared by chemical deposition of PbS an CdSe single crystal wafers. The electrical and photovoltaic properties of the heterojunctions were investigated at room temperature. The energy band diagram of such heterojunctions is constructed and the value obtainod for built-in voltage is compared with the capacitative cut-off voltage.Keywords
This publication has 9 references indexed in Scilit:
- Lead sulphide-gallium antimonide heterojunctionsPhysica Status Solidi (a), 1973
- Detectivity calculations for photovoltaic heterojunction detectorsInfrared Physics, 1970
- PbS-GaAs heterojunctionsPhysica Status Solidi (a), 1970
- Lead selenide–silicon heterojunctionsPhysica Status Solidi (a), 1970
- CdS-PbS HeterojunctionsJournal of the Electrochemical Society, 1969
- Electrical and Photovoltaic Properties of PbS-Si HeterodiodesPhysica Status Solidi (b), 1967
- Electron Affinity of Semiconducting Compound CdSeJapanese Journal of Applied Physics, 1966
- Ge-Epitaxial-PbS HeterojunctionsJournal of Applied Physics, 1966
- Work Function of Lead SulfideJournal of Applied Physics, 1965