DC analysis of an MOS source follower

1 September 1968

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits

Vol. 3 (3) , 306-307
https://doi.org/10.1109/JSSC.1968.1049908

Abstract

The source follower operation of a normally off MOS device is analyzed. Input-output relationships in terms of applied voltages and device parameters are derived. Experimental verifications of the foregoing theory are included.

Keywords

LOGIC CIRCUITS
THRESHOLD VOLTAGE
MOS DEVICES
LOGIC DEVICES
LEAKAGE CURRENT
IMPURITIES
EQUATIONS
DOPING

This publication has 1 reference indexed in Scilit:

Surface effects on p-n junctions: Characteristics of surface space-charge regions under non-equilibrium conditions
Solid-State Electronics, 1966