Macroscopic mechanism of group V interdiffusion in undoped InGaAs/InP quantum wells grown by MOVPE
- 1 October 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 105 (1-4) , 348-352
- https://doi.org/10.1016/0022-0248(90)90384-w
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Room-temperature exciton optical absorption peaks in InGaAsP/InP multiple quantum wellsApplied Physics Letters, 1989
- Thermal stability of InGaAs/InP quantum well structures grown by gas source molecular beam epitaxyApplied Physics Letters, 1987
- High quality narrow GaInAs/InP quantum wells grown by atmospheric organometallic vapor phase epitaxyApplied Physics Letters, 1986
- X-ray diffraction study of interdiffusion and growth in (GaAs)n(AlAs)m multilayersJournal of Applied Physics, 1980