Thin-film CuIn1−xGaxSe2 photovoltaic cells from solution-based precursor layers

We have fabricated 15.4% and 12.4% efficient thin-film ${\mathrm{CuIn}}_{\text{1−x}}{\mathrm{Ga}}_x{\mathrm{Se}}_{\mathrm{2}}$ (CIGS)-based photovoltaic devices from solution-based electrodeposited (ED) and electroless-deposited (EL) precursors. As-deposited precursors are Cu-rich CIGS. Additional In, Ga, and Se are added to the ED and EL precursor films by physical vapor deposition (PVD) to adjust the final semiconductor film composition to ${\mathrm{CuIn}}_{\text{1−x}}{\mathrm{Ga}}_x{\mathrm{Se}}_{\mathrm{2}}.$ The ED and EL device parameters are compared with those of a 17.7% PVD device. The tools used for comparison are current voltage, capacitance voltage, and spectral response characteristics.