Negative Absolute Mobility of Minority Electrons in GaAs Quantum Wells
- 23 June 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 56 (25) , 2736-2739
- https://doi.org/10.1103/physrevlett.56.2736
Abstract
We report the observation of negative absolute mobility of electrons (i.e., a drift toward the negative electrode) in -modulation-doped GaAs quantum wells. This unusual effect results from "carrier drag" on the electrons by the high-mobility hole plasma via electron-hole scattering.
Keywords
This publication has 14 references indexed in Scilit:
- Femtosecond Excitation of Nonthermal Carrier Populations in GaAs Quantum WellsPhysical Review Letters, 1986
- Nonequilibrium electron-hole plasma in GaAs quantum wellsPhysical Review Letters, 1986
- Picosecond time-of-flight measurements of minority electrons in GaAs/AlGaAs quantum well structuresApplied Physics Letters, 1986
- Direct Observation of Ballistic Transport in GaAsPhysical Review Letters, 1985
- Subpicosecond Spectral Hole Burning Due to Nonthermalized Photoexcited Carriers in GaAsPhysical Review Letters, 1985
- Injected-Hot-Electron Transport in GaAsPhysical Review Letters, 1985
- Thermalization of hot electrons in quantum wellsPhysica B+C, 1985
- Electron Mobility and Drag Effect in p-Type SiliconJapanese Journal of Applied Physics, 1985
- Femtosecond Orientational Relaxation of Photoexcited Carriers in GaAsPhysical Review Letters, 1984
- A theory of the effects of carrier-carrier scattering on mobility in semiconductorsJournal of Physics and Chemistry of Solids, 1960