Influence of a gate oxide on the 1/ƒ noise in Si
- 29 February 1988
- journal article
- Published by Elsevier in Physica B+C
- Vol. 147 (2) , 305-310
- https://doi.org/10.1016/0378-4363(88)90289-6
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- 1/f noise in ion-implanted resistors between 77 and 300 KJournal of Applied Physics, 1987
- Correlation between most 1/f noise and CCD transfer inefficiencySolid-State Electronics, 1985
- Experimental studies on 1/f noiseReports on Progress in Physics, 1981
- Model for 1/f noise in metal-oxide-semiconductor transistorsJournal of Applied Physics, 1981