Capillary Alloying: An Improved Alloying Method

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Abstract
Alloying of metals to semiconductors is studied by using a liquid alloy contained in a capillary and fed from a large reservoir of alloy. The diffusion constant of germanium in liquid indium is found to be . The alloying method described permits the preparation of uniformly alloyed small contacts to semiconductors. It is demonstrated that extremely flat junctions can be prepared and that the distance of these junctions from the wafer surface can be controlled at as shallow a depth as 0.25 µ. Advantages of this new method include (a) very high degree of purity of the liquid alloy surface previous to alloying, (b) the possibility of investigating conveniently a large number of alloy compositions, and (c) avoiding the handling of extremely small pellets.

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