The temperature dependence of the band-edge effective masses of InSb, InAs and GaAs as deduced from magnetophonon magnetoresistance measurements
- 1 May 1970
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 3 (5) , L94-L99
- https://doi.org/10.1088/0022-3719/3/5/005
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Infra-red cyclotron resonance in n-type epitaxial InAs with evidence of polaron couplingJournal of Physics C: Solid State Physics, 1969
- The magnetophonon effect in III-V semiconducting compoundsJournal of Physics C: Solid State Physics, 1968
- The evidence for an enhancement of the polaron effect observed in magnetophonon resistance oscillations in CdTeJournal of Physics C: Solid State Physics, 1968
- Band structure of indium antimonideJournal of Physics and Chemistry of Solids, 1957