Improved subthreshold characteristics of n-channel SOI transistors

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Abstract
It has been found that certain n-channel MOSFET's fabricated on silicon-on-insulator (SOI) substrates formed by oxygen implantation can have\log (I_{d}): V_{gs}, characteristics with very steep slopes in the subthreshold region. In contradiction to normal models for short-channel transistors on bulk silicon, the slope becomes steeper for shorter gate lengths or higher drain voltages. This effect is shown to be related to the kink in the output characteristics of transistors with floating islands.