Electronic properties of Mg0.7Zn0.3-xGaxsimple metallic glasses

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Abstract
Measurements of the Hall coefficient, the angular correlation of the positron annihilation, the low-temperature specific heat, and the electrical resistivity are reported for the simple metallic glasses Mg0.7Zn0.3-xGax in the composition range 00.7Zn0.24Ga0.06 alloy also indicates a deviation from the free-electron curve. The electronic specific heat coefficient decreases slightly with increasing Ga content, again being opposite to the trend expected from the free-electron model. All these results are consistent with the departure from the free-electron behaviour when Ga is added to the free-electron-like Mg0.7Zn0.3. The electrical resistivity at 300K, rho 300K, increases from 54 to 94 mu Omega cm when Ga is substituted for Zn up to x=0.2. It is also found that the detailed temperature dependence of the electrical resistivity at low temperatures depends strongly on the magnitude of rho 300K. The electrical resistivity data above 300K, in combination with X-ray diffraction studies, revealed that the addition of Ga changes the crystallisation process drastically and contributes to suppress the formation of the metastable Mg51Zn20 compound.

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