Infrared reflectivity by transverse-optical phonons in (GaAs/(AlAsultrathin-layer superlattices
- 15 June 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 43 (18) , 14754-14757
- https://doi.org/10.1103/physrevb.43.14754
Abstract
We report far-infrared reflectivity measurements on (GaAs(AlAs superlattices (SL’s) with systematically varied layer thicknesses in the range 1≤m,n≤7. Taking advantage of an appropriate choice of the total SL thickness D≤0.3 μm, we measure the frequencies of AlAs-like confined phonons from the peak of the reststrahlen band. The GaAs-like frequencies are obtained by fitting reflectivity spectra to the SL dielectric-response-theory model. Microscopic calculations of confined TO frequencies are performed within an ab initio scheme and successfully compared with the experimental data.
Keywords
This publication has 16 references indexed in Scilit:
- Dependence of ?Reststrahlen? bands in far-infrared reflectivity on configuration of GaAs/AlAs multiple quantum well heterostructuresApplied Physics A, 1990
- Calculations of phonon spectra in III–V and SiGe superlattices: A tool for structural characterizationSurface Science, 1990
- Experimental observation of attenuated-total-reflection spectra of GaAs/AlAs superlatticePhysical Review B, 1990
- Phonons in GaAs-AlxGa1−xAs superlatticesJournal of Luminescence, 1989
- Anisotropy and infrared response of the GaAs-AlAs superlatticePhysical Review B, 1988
- Electronic and vibronic structure of the (GaAs(AlAssuperlatticePhysical Review B, 1987
- Lattice Vibration of Thin-Layered AlAs-GaAs SuperlatticesJapanese Journal of Applied Physics, 1986
- Far infrared reflectivity of semiconductor superlattice and multi-quantum well structuresSolid State Communications, 1986
- Raman scattering from (AlAs(GaAsultrathin-layer superlatticesPhysical Review B, 1986
- Raman scattering from GaAsAlAs monolayer-controlled superlatticesSolid State Communications, 1985