Hot-electron-induced degradation of pseudomorphic high-electron mobility transistors
- 19 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 115-118
- https://doi.org/10.1109/mcs.1995.470978
Abstract
Pseudomorphic high-electron mobility transistors have been found to undergo hot-electron-induced degradation. Due to the negative temperature dependence of hot-electron effects, it will be necessary to conduct electrical and temperature stress tests separately, in order to ascertain the reliability of these transistors under normal operating conditions.Keywords
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