Diffused Emitter and Base Silicon Transistors*
- 1 January 1956
- journal article
- website
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Bell System Technical Journal
- Vol. 35 (1) , 1-22
- https://doi.org/10.1002/j.1538-7305.1956.tb02371.x
Abstract
Silicon n-p-n transistors have been made in which the base and emitter regions were produced by diffusing impurities from the vapor phase. Transistors with base layers 3.8 10−4-cm thick have been made. The diffusion techniq...Keywords
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