Non-ohmic transport and phonon amplification in polar semiconductors
- 28 November 1972
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 5 (23) , 3349-3370
- https://doi.org/10.1088/0022-3719/5/23/009
Abstract
A displaced maxwellian model for hot electrons in polar semiconductors is used to analyse the detailed time dependence of optical and acoustic phonon disturbances in n-InSb at low temperatures. No nonlinear phonon processes are considered, restricting the applicability of the present theory to small phonon disturbances (optical phonons) or to the initial stages of strong acoustic phonon instabilities.Keywords
This publication has 29 references indexed in Scilit:
- Time dependent phonon distribution in hot electron experimentsJournal of Physics and Chemistry of Solids, 1970
- Incubation Time of Acoustoelectric Domain inn-InSbJournal of the Physics Society Japan, 1970
- Lattice dynamics of III–V compoundsCanadian Journal of Physics, 1969
- Electron mobility in polar semiconductors at intermediate and high electric fieldsJournal of Physics and Chemistry of Solids, 1968
- The electric field dependence of carrier temperature in semiconductorsProceedings of the Physical Society, 1967
- Disturbance of Phonon Distribution by Hot ElectronsPhysical Review B, 1964
- Phonon and electron distributions in high electric fieldsJournal of Physics and Chemistry of Solids, 1964
- Effets des hauts champs électriques sur les phénomènes de transport dans InSb à basse températurePhysica Status Solidi (b), 1964
- Lattice Screening in Polar SemiconductorsProceedings of the Physical Society, 1959
- Screening effects in polar semiconductorsJournal of Physics and Chemistry of Solids, 1959