Epitaxial growth of YBa2Cu3O7 films on GaAs with MgO buffer layers
- 12 October 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (15) , 1841-1843
- https://doi.org/10.1063/1.108392
Abstract
We have grown epitaxial YBa2Cu3O7 films on GaAs using MgO buffer layers similar to Fork, Nashimoto, and Geballe [Appl. Phys. Lett. 60, 1621 (1992)]. However, the YBa2Cu3O7 was deposited by thermal coevaporation at an even lower substrate temperature of 620 °C. We obtained substantially improved quality [Tc=86.8 K, jc(77 K)=1.2×106 A/cm2, ρ(100 K)≤100 μΩ cm] and smooth surfaces free of outgrowth. An important aspect is preventing As contamination from the gas phase. This was achieved by encapsulating the free sample surface.Keywords
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