Measurement of spatial variation of responsiveness in solid-state imager

Abstract
An experimental setup that provides the measurement of the spatial variation of the responsiveness of a single photodiode belonging to a linear metal-oxide-semiconductor (MOS) photoarray is described. An optical microscanning technique has been employed to sequentially illuminate a small area of a single photoelement in order to achieve the mapping of its spatial responsiveness. Experimental results for a single pixel are graphically presented.

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