Bias-induced stress transitions in sputtered TiN films
- 1 July 1986
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 4 (4) , 1850-1854
- https://doi.org/10.1116/1.573776
Abstract
We report on intrinsic stress properties of magnetron sputtered titanium nitride films deposited under different conditions. By proper selection of processing parameters, films with low stress can be obtained. Unstressed film formation is favored by low substrate bias voltage, high pressure, or use of heavy sputtering gases. Stress relief is, however, accompanied by an increase in resistivity and a decrease in film density. As a result of these changes the effectiveness of such titanium nitride films as diffusion barriers between silicon and aluminum is minimal.Keywords
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