Non-linear and hopping transport of wide-band-gap semiconductors

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Abstract
A formal expression by Stark-ladder representation was developed to explain the non-linear transport properties of wide-band-gap semiconductors, where interband transitions can be neglected. The momentum and energy relaxation time were shown to be functions of the electric field. The momentum conservation law in the electron-phonon interaction held only for the component perpendicular to the electric field, and the component along the field was not conserved. The energy conservation law was also modified by the electric field. The momentum transfer along the electric field shifted the energy conservation and the sharpness of the law was determined by the strength of the field. The hopping conduction at the high-field quantum limit was shown to be proportional to the strength of the scattering. The temperature dependence of the mobility at the hopping region was thus contrary to that of the low-field band conduction.

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