In situ investigation of polymorphous silicon deposition
- 1 May 2000
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 266-269, 48-53
- https://doi.org/10.1016/s0022-3093(99)00723-1
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Midgap density of states in hydrogenated polymorphous siliconJournal of Applied Physics, 1999
- Contactless electronic transport analysis of microcrystalline siliconThin Solid Films, 1999
- Nanoparticle formation in low-pressure silane plasmas: bridging the gap between a-Si:H and μc-Si filmsJournal of Non-Crystalline Solids, 1998
- Cross‐Sections, Rate Constants and Transport Coefficients in Silane Plasma ChemistryContributions to Plasma Physics, 1996
- Real-time spectroscopic ellipsometry study of the growth of amorphous and microcrystalline silicon thin films prepared by alternating silicon deposition and hydrogen plasma treatmentPhysical Review B, 1995
- Plasma Enhanced Chemical Vapour Deposition of Hydrogenated Amorphous Silicon from Dichlorosilane and Silane Gas MixturesJapanese Journal of Applied Physics, 1995
- Berechnung verschiedener physikalischer Konstanten von heterogenen Substanzen. I. Dielektrizitätskonstanten und Leitfähigkeiten der Mischkörper aus isotropen SubstanzenAnnalen der Physik, 1935