Planar dechanneling of protons in Si and Ge
- 1 December 1976
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 14 (11) , 4830-4833
- https://doi.org/10.1103/physrevb.14.4830
Abstract
Using the diffusion coefficient previously obtained from the inelastic scattering probability and the diffusion equation, half thicknesses for escape of MeV protons from the (110) planar channels of Si and Ge are calculated in detail. The agreement with the experiment is satisfactory. The difference between the diffusion coefficients along and across the channel plane is also discussed.Keywords
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