Layered tantalum-aluminum oxide films deposited by atomic layer epitaxy
- 1 March 1993
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 225 (1-2) , 296-298
- https://doi.org/10.1016/0040-6090(93)90173-m
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- BaTiO3 thin film capacitors deposited by r.f. magnetron sputteringThin Solid Films, 1992
- Investigation on Leakage Current Reduction of Photo‐CVD Tantalum Oxide Films Accomplished by Active Oxygen AnnealingJournal of the Electrochemical Society, 1992
- The effect of substrate temperature on the composition and growth of tantalum oxide thin films deposited by plasma-enhanced chemical vapour depositionThin Solid Films, 1991
- Some Properties of RF Sputtered Al2 O 3 ‐ Ta2 O 5 Composite Thin FilmsJournal of the Electrochemical Society, 1991
- Application of Penta-Di-Methyl-Amino-Tantalum to a Tantalum Source in Chemical Vapor Deposition of Tantalum Oxide FilmsJapanese Journal of Applied Physics, 1991
- Fitting of transmission data for determining the optical constants and thicknesses of optical filmsJournal of Applied Physics, 1990
- Dielectrics for bright EL displaysIEEE Transactions on Electron Devices, 1989