HgZnTe for very long wavelength infrared applications

• 1 May 1991
• journal article
• Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
• Vol. 9  (3) , 1746-1751
• https://doi.org/10.1116/1.585410

Abstract

Keywords

• INFRARED
• INFRARED RADIATION
• SEMICONDUCTOR DETECTOR
• ZINC
• X RAY DIFFRACTION
• FULL WIDTH AT HALF MAXIMUM