Laser-induced fluorescence spectroscopy for the determination of the absolute density and spatial distribution of Si atoms in a SiH4-He-Ar glow discharge
- 1 August 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (3) , 1050-1054
- https://doi.org/10.1063/1.342476
Abstract
We report on the absolute density and the spatial distribution of silicon atoms in a SiH4-He-Ar dc glow discharge measured by the laser-induced fluorescence method. The absolute sensitivity of the fluorescence-photon-counting system was calibrated by using the same system to measure Rayleigh scattering by Ar gas in the discharge chamber. The fluorescence quantum efficiency and the polarization degree of emitted light were measured to confirm the absence of excited-state quenching induced by collisions with the buffer-gas atoms. The measured spatial distribution profile of the ground-state silicon atoms is compared with that of the excited-state atoms.This publication has 15 references indexed in Scilit:
- Excitation Anisotropy in Laser-Induced-Fluorescence Spectroscopy –High-Intensity, Broad-Line ExcitationJapanese Journal of Applied Physics, 1986
- Gas-phase silicon atoms in silane chemical vapor deposition: Laser-excited fluorescence measurements and comparisons with model predictionsJournal of Applied Physics, 1986
- Comparisons between a gas-phase model of silane chemical vapor deposition and laser-diagnostic measurementsJournal of Applied Physics, 1986
- Laser diagnostics of a silane plasma—SiH radicals in an a-Si:H chemical vapor deposition systemJournal of Vacuum Science & Technology A, 1986
- Particle Distributions and Laser-Particle Interactions in an RF Discharge of SilaneIEEE Transactions on Plasma Science, 1986
- Single-shot laser-saturated fluorescence measurements: a new methodApplied Optics, 1986
- Calibration of laser-saturated fluorescence measurements using Rayleigh scatteringApplied Optics, 1985
- Spatial concentrations of silicon atoms by laser-induced fluorescence in a silane glow dischargeApplied Physics Letters, 1984
- Production mechanism and reactivity of the SiH radical in a silane plasmaChemical Physics, 1984
- Photofragment Alignment and OrientationAnnual Review of Physical Chemistry, 1982