Electron irradiation damage in silicon containing high concentrations of boron-lithium pairs
- 21 September 1974
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 7 (18) , 3418-3426
- https://doi.org/10.1088/0022-3719/7/18/025
Abstract
Silicon containing high concentrations of boron of up to 2*1019 cm-3 has been compensated by lithium diffusion and then irradiated in stages at 300K by 2 MeV electrons. Infrared local mode absorption measurements have shown that the latter treatment destroys (B-(s)-Li+(i)) pairs. Initially the boron is displaced into interstitial sites, but aggregation must occur in the later stages while the lithium forms precipitate particles which give rise to optical scatter loss. The observations are compared with previous results for irradiated boron-doped crystals compensated with substitutional donors or for uncompensated samples.Keywords
This publication has 17 references indexed in Scilit:
- Electron irradiation damage in silicon containing high concentrations of boronJournal of Physics C: Solid State Physics, 1972
- One phonon absorption from aluminium complexes in silicon compensated by lithium or electron irradiationJournal of Physics and Chemistry of Solids, 1970
- The kinetics of migration of point defects to dislocationsReports on Progress in Physics, 1970
- One-phonon band-mode absorption by impurity resonances in diamond and siliconProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1968
- 1.8-, 3.3-, and 3.9-μ Bands in Irradiated Silicon: Correlations with the DivacancyPhysical Review B, 1966
- Infrared study of localized vibrations in silicon due to boron and lithiumJournal of Physics and Chemistry of Solids, 1966
- A study of vibrations of boron and phosphorus in silicon by infra-red absorptionProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1965
- Vibrational Spectra of Lithium-Oxygen and Lithium-Boron Complexes in SiliconPhysical Review B, 1965
- Localized vibration due to boron and lithium in the silicon latticeJournal of Physics and Chemistry of Solids, 1964
- Defects in Irradiated Silicon. II. Infrared Absorption of the Si-CenterPhysical Review B, 1961