Poly-3-methylthiophene/ solar cell formed by electrodeposition and processing
- 1 December 1998
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 13 (12) , 1459-1462
- https://doi.org/10.1088/0268-1242/13/12/023
Abstract
(CIS) thin films were electrodeposited and characterized for photovoltaic applications. As-deposited and selenized films exhibited different kinds of morphology. The conductivity type, carrier concentration and flat-band potential were determined from photoelectrochemical studies. Schottky barrier type photovoltaic junctions were formed by using a heavily doped PMeT (poly-3-methylthiophene, displaying nearly metallic behaviour) prepared by electropolymerization, and CIS obtained by electrodeposition. The photovoltaic structure formed and studied was an Mo/CIS/PMeT/grid Schottky barrier junction. A corrected solar to electrical conversion efficiency of 1.4% was obtained in the case of the PMeT/CIS junction.Keywords
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