Effect of small-cluster mobility and dissociation on the island density in epitaxial growth
- 15 July 1995
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 52 (4) , 2907-2913
- https://doi.org/10.1103/physrevb.52.2907
Abstract
We suggest that for many systems the epitaxial growth conditions are such that the mobility of small clusters, such as dimers, substantially affects the density of the islands formed by nucleation, while the dissociation of the clusters is less important. We study the effect of small-cluster mobility on the island density formed under epitaxial growth conditions with both rate equations and computer simulations. We find that the scaling derived by Villain, Pimpinelli, Tang, and Wolf from simple rate equations is in agreement with the simulations, if great care is taken to make sure that the system has reached the scaling regime. As an application we suggest a more plausible analysis of some important recent experiments. The scaling equations can be used to extract the activation barriers for monomer and small-cluster diffusion from data on island-density dependence on temperature and deposition rate.This publication has 33 references indexed in Scilit:
- Dynamics of irreversible island growth during submonolayer epitaxyPhysical Review B, 1994
- Nucleation and growth in metal-on-metal homoepitaxy: Rate equations, simulations and experimentsJournal of Vacuum Science & Technology A, 1994
- Saturation and scaling of epitaxial island densitiesPhysical Review Letters, 1994
- Growth and coalescence in submonolayer homoepitaxy on Cu(100) studied with high-resolution low-energy electron diffractionPhysical Review Letters, 1994
- Nucleation and growth of square islands during deposition: Sizes, coalescence, separations and correlationsSurface Science, 1993
- Island formation in submonolayer epitaxyJournal de Physique I, 1993
- Scaling analysis of diffusion-mediated island growth in surface adsorption processesPhysical Review B, 1992
- Nucleation and diffusion of Cu adatoms on Cu(100): A helium-atom-beam scattering studyPhysical Review B, 1992
- Activation energy for surface diffusion of Si on Si(001): A scanning-tunneling-microscopy studyPhysical Review Letters, 1991
- Nucleation and growth of thin filmsReports on Progress in Physics, 1984